Nanotechnology

Researchers at University of Virginia target applied physics

  2009 JUL 20 - (VerticalNews.com) -- "We investigate the role of various structural nonidealities on the performance of armchair-edge graphene nanoribbon field effect transistors (GNRFETs). Our results show that edge roughness dilutes the chirality dependence often predicted by theory but absent experimentally," researchers in the United States report.

  "Instead, GNRs are classifiable into wide (semimetallic) versus narrow (semiconducting) strips, defining thereby the building blocks for wide-narrow-wide all-graphene devices and interconnects. Small bandgaps limit drain bias at the expense of band-to-band tunneling in GNRFETs," wrote F. Tseng and colleagues, University of Virginia.

  The researchers concluded: "We outline the relation between device performance metrics and nonidealities such as width modulation, width dislocations and surface step, and nonideality parameters such as roughness amplitude and correlation length.."

  Tseng and colleagues published their study in Applied Physics Letters (Diluted chirality dependence in edge rough graphene nanoribbon field-effect transistors. Applied Physics Letters, 2009;94(22):23112).

  For additional information, contact F. Tseng, University of Virginia, Dept. of Electrical & Computational Engineering, Charlottesville, VA 22904, USA.

  Publisher contact information for the journal Applied Physics Letters is: American Institute Physics, Circulation & Fulfillment Division, 2 Huntington Quadrangle, Ste. 1 N O 1, Melville, NY 11747-4501, USA.

  Keywords: Emerging Technologies, Nanoribbon, Nanotech, Nanotechnology, Physics, University of Virginia.

  This article was prepared by VerticalNews Nanotechnology editors from staff and other reports. Copyright 2009, VerticalNews Nanotechnology via VerticalNews.com.